Quantum tunneling in magnetic tunneling junctions

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Evgeni Cruz de Gracia
Lucio Strazzabosco Dorneles
Luiz Fernando Schelp
Sérgio Ribeiro Teixiera
Mario Norberto Baibich
Enviado: Jun 29, 2016

Resumen

This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.

Palabras clave

Electronic transport, junction, magnetization, tunneling

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Cómo citar
Cruz de Gracia, E., Strazzabosco Dorneles, L., Schelp, L., Ribeiro Teixiera, S., & Baibich, M. (1). Quantum tunneling in magnetic tunneling junctions. I+D Tecnológico, 8(1), 26-32. Recuperado a partir de https://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
Biografía del autor/a

Evgeni Cruz de Gracia, Universidad Tecnológica de Panamá

Facultad de Ingeniería Eléctrica

Lucio Strazzabosco Dorneles, Universidad Federal de Santa María

Departamento de Física

Luiz Fernando Schelp, Universidad Federal de Santa María

Departamento de Física

Sérgio Ribeiro Teixiera, Universidad Federal de Río Grande del Sur

Instituto de Física

Mario Norberto Baibich, Universidad Federal de Río Grande del Sur

Instituto de Física